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FDMC86102 N-Channel Power Trench(R) MOSFET
July 2009
FDMC86102
N-Channel Power Trench(R) MOSFET
100 V, 20 A, 24 m
Features
Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
Top
Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 33
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 100 20 20 29 7 30 72 41 2.3 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 C/W
Package Marking and Ordering Information
Device Marking FDMC86102 Device FDMC86102 Package Power 33 Reel Size 13'' Tape Width 12 mm Quantity 3000 units
(c)2009 Fairchild Semiconductor Corporation FDMC86102 Rev.C
1
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FDMC86102 N-Channel Power Trench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V 100 69 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 7 A VGS = 6 V, ID = 5 A VGS = 10 V, ID = 7 A, TJ = 125 C VDD = 10 V, ID = 7 A 2.0 3.1 -9 19.4 26.8 32.8 19 24 38 41 S m 4.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 725 175 15 0.5 965 235 25 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V ID = 7 A VDD = 50 V, ID = 7 A, VGS = 10 V, RGEN = 6 8 4 14 4 13 8 3.7 3.6 17 10 25 10 18 11 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 7 A VGS = 0 V, IS = 2 A IF = 7 A, di/dt = 100 A/s (Note 2) (Note 2) 0.81 0.75 44 40 1.3 1.2 70 65 V ns nC
NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design.
a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper
b. 125 C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %. 3. Starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 12 A, VDD = 90 V, VGS = 10 V.
FDMC86102 Rev.C
2
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FDMC86102 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
30 25
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 5.5 V VGS = 10 V VGS = 6 V VGS = 5 V
5
VGS = 4.5 V
4
VGS = 5 V
20 15 10 5 0 0.0
3
VGS = 5.5 V
2
VGS = 6 V
VGS = 4.5 V
1
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V
0.5
1.0
1.5
2.0
2.5
3.0
0 0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
80
SOURCE ON-RESISTANCE (m) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
2.0
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75
ID = 7 A VGS = 10 V
70 60 50
ID = 7 A
rDS(on), DRAIN TO
TJ = 125 oC
40 30 20
TJ = 25 oC
-50
-25
0
25
50
75
100 125 150
10 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance vs Junction Temperature
30 25
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to Source Voltage
60
IS, REVERSE DRAIN CURRENT (A) VGS = 0 V
10
TJ = 150 oC TJ = 25 oC
VDS = 5 V
20 15
TJ = 150 oC
1
0.1
10
TJ = 25 oC
5
TJ = -55 oC
0.01
TJ = -55 oC
0 2 3 4 5 6 7
VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMC86102 Rev.C
3
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FDMC86102 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 7 A VDD = 50 V
1000
Ciss
CAPACITANCE (pF)
8
VDD = 25 V VDD = 75 V
6 4 2
Coss
100
f = 1 MHz VGS = 0 V
Crss
0 0 2 4 6 8 10 12 14
Qg, GATE CHARGE (nC)
10 0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
30
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10 9 8 7 6 5 4 3 2
25 20
Limited by Package VGS = 10 V VGS = 6 V
TJ = 25 oC
15 10 5
RJC = 3 C/W
o
TJ = 100 oC
TJ = 125 oC
1 0.01
0.1
1
10
30
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
50 10
100 s 1 ms
Figure 10. Maximum Continuous Drain Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
VGS = 10 V
ID, DRAIN CURRENT (A)
100
1
THIS AREA IS LIMITED BY rDS(on)
10 ms 100 ms 1s 10 s DC
10
SINGLE PULSE RJA = 125 oC/W
0.1
SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC
1
0.01 0.01
TA = 25 oC
0.1
1
10
100
500
0.5 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMC86102 Rev.C
4
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FDMC86102 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
SINGLE PULSE RJA = 125 C/W
o
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
-2
0.001 -4 10
10
-3
10
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMC86102 Rev.C
5
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FDMC86102 N-Channel Power Trench(R) MOSFET
Dimensional Outline and Pad Layout
FDMC86102 Rev.C
6
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FDMC86102 N-Channel Power Trench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench(R) Auto-SPMTM F-PFSTM The Power Franchise(R) PowerXSTM Build it NowTM FRFET(R) (R) Global Power ResourceSM Programmable Active DroopTM CorePLUSTM Green FPSTM QFET(R) CorePOWERTM TinyBoostTM QSTM Green FPSTM e-SeriesTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM CTLTM GmaxTM TinyLogic(R) RapidConfigureTM Current Transfer LogicTM GTOTM TINYOPTOTM EcoSPARK(R) IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM (R) Fairchild SuperFETTM MotionMaxTM (R) Fairchild Semiconductor SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM SuperSOTTM-6 UHC(R) OPTOLOGIC(R) (R) FACT OPTOPLANAR(R) Ultra FRFETTM SuperSOTTM-8 (R) (R) FAST UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDMC86102 Rev.C
7
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